Title

Investigation of Sub-10-nm Diameter, Gate-All-Around Nanowire Field-Effect Transistors for Electrostatic Discharge Applications

Authors

Authors

W. Liu; J. J. Liou; Y. Jiang; N. Singh; G. Q. Lo; J. Chung;Y. H. Jeong

Comments

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Abbreviated Journal Title

IEEE Trans. Nanotechnol.

Keywords

Electrostatic discharge (ESD); failure current; leakage current; (I(leakage)); nanowire; on-resistance (R(on)); Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied

Abstract

Electrostatic discharge (ESD) robustness of a promising nanoscaled device, the gate-all-around nanowire field-effect transistor (NW FET), was characterized for the first time using the transmission-line pulsing technique. The effects of gate length, nanowire dimension, and nanowire count on the failure current, leakage current, trigger voltage, and on-resistance were investigated. ESD performances of the gate-all-around NW FET and other nanostructure devices, such as the poly-Si nanowire thin-film transistor and FinFET were also compared and discussed.

Journal Title

Ieee Transactions on Nanotechnology

Volume

9

Issue/Number

3

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

352

Last Page

354

WOS Identifier

WOS:000277775700013

ISSN

1536-125X

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