Electro-thermal stress effect on InGaP/GaAs heterojunction bipolar low-noise amplifier performance
Abbreviated Journal Title
Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
This paper investigates the electro-thermal stress-induced performance degradation of a cascode low-noise amplifier built using advanced InGaP/GaAs heterojunction bipolar transistors. Changes in device characteristics due to the electro-thermal stress are examined experimentally. SPICE Gummel-Poon model parameters extracted from the pre- and post-stress HBT measurement data are then used in Cadence SpectreRF simulator to study the impact of the electro-thermal stress on the InGaP/GaAs LNA's RF performance. (C) 2009 Elsevier Ltd. All rights reserved.
"Electro-thermal stress effect on InGaP/GaAs heterojunction bipolar low-noise amplifier performance" (2010). Faculty Bibliography 2010s. 452.