Title

Electro-thermal stress effect on InGaP/GaAs heterojunction bipolar low-noise amplifier performance

Authors

Authors

X. Liu; J. S. Yuan;J. J. Liou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Microelectron. Reliab.

Keywords

Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

This paper investigates the electro-thermal stress-induced performance degradation of a cascode low-noise amplifier built using advanced InGaP/GaAs heterojunction bipolar transistors. Changes in device characteristics due to the electro-thermal stress are examined experimentally. SPICE Gummel-Poon model parameters extracted from the pre- and post-stress HBT measurement data are then used in Cadence SpectreRF simulator to study the impact of the electro-thermal stress on the InGaP/GaAs LNA's RF performance. (C) 2009 Elsevier Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

50

Issue/Number

3

Publication Date

1-1-2010

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/j.microrel.2009.12.007

Language

English

First Page

365

Last Page

369

WOS Identifier

WOS:000275993100009

ISSN

0026-2714

Recommended Citation

"Electro-thermal stress effect on InGaP/GaAs heterojunction bipolar low-noise amplifier performance" (2010). Faculty Bibliography 2010s. 452.
https://stars.library.ucf.edu/facultybib2010/452