Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications
Abbreviated Journal Title
IEEE Electron Device Lett.
Electrostatic discharge (ESD); high holding voltage; latchup; silicon-controlled rectifier (SCR); SCR; Engineering, Electrical & Electronic
Latchup immunity is a challenging issue for the design of power supply clamps used in high-voltage electrostatic discharge (ESD) protection applications. While silicon-controlled rectifiers (SCRs) are highly robust ESD devices, they are traditionally not suited for high-voltage ESD due to their inherent low holding voltage and, thus, vulnerability to latchup. In this letter, a novel SCR stacking structure with an extremely high holding voltage, very small snapback, and acceptable failure current has been developed. The new and existing high holding voltage ESD devices are also compared to demonstrate the advancement of this work.
Ieee Electron Device Letters
"Silicon-Controlled Rectifier Stacking Structure for High-Voltage ESD Protection Applications" (2010). Faculty Bibliography 2010s. 455.