Title

Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors

Authors

Authors

C. Schwarz; A. Yadav; M. Shatkhin; E. Flitsiyan; L. Chernyak; V. Kasiyan; L. Liu; Y. Y. Xi; F. Ren; S. J. Pearton; C. F. Lo; J. W. Johnson;E. Danilova

Comments

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Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

GALLIUM NITRIDE; SEMICONDUCTORS; HARDNESS; GAN; DC; Physics, Applied

Abstract

AlGaN/GaN high electron mobility transistors were irradiated with Co-60 gamma-rays to doses up to 1000 Gy, in order to analyze the effects of irradiation on the devices' transport properties. Temperature-dependent electron beam-induced current measurements, conducted on the devices before and after exposure to gamma-irradiation, allowed for the obtaining of activation energies related to radiation-induced defects due to nitrogen vacancies. DC current-voltage measurements were also conducted on the transistors to assess the impact of gamma-irradiation on transfer, gate, and drain characteristics. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792240]

Journal Title

Applied Physics Letters

Volume

102

Issue/Number

6

Publication Date

1-1-2013

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000315053300033

ISSN

0003-6951

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