IR permittivities for silicides and doped silicon
Abbreviated Journal Title
J. Opt. Soc. Am. B-Opt. Phys.
OPTICAL-PROPERTIES; NICKEL SILICIDES; WAVE-GUIDE; CONSTANTS; FILMS; ELLIPSOMETRY; WAVELENGTH; DISILICIDE; METALS; PD2SI; Optics
The complex permittivity for Pt, Pd, Ni, and Ti-silicide films as well as heavily doped p-and n-type silicon were determined by ellipsometry over the energy range 0.031 eV to 4.0 eV. Fits to the Drude model gave bulk plasma and relaxation frequencies. Rutherford backscattering spectroscopy, X-ray diffraction, scanning electron microscopy, secondary ion mass spectrometry, and four-point probe measurements complemented the optical characterization. Calculations from measured permittivities of waveguide loss and mode confinement suggest that the considered materials are better suited for long-wavelength surface-plasmon-polariton waveguide applications than metal films. (C) 2010 Optical Society of America
Journal of the Optical Society of America B-Optical Physics
"IR permittivities for silicides and doped silicon" (2010). Faculty Bibliography 2010s. 50.