Surface potential calculation and drain current model for junctionless double-gate polysilicon TFTs
Abbreviated Journal Title
TRANSISTORS; MOSFETS; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied
Surface potential is a key parameter in evaluating the DC property of thin-film transistors (TFTs). In this paper, for the junctionless symmetric double-gate polysilicon TFTs, a physical-based explicit calculation to surface potential has been derived. Incorporating impurity concentration, mobile charge and trap density into Poisson's equation, a closed form of band bending as a function of gate voltage is obtained and demonstrated as an accurate and computationally efficient solution. Based on surface potential, a drain current model for long-channel devices is provided in explicit forms. Furthermore, it is verified successfully by comparisons with both 2D numerical simulation and experimental data in different operation regions. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
"Surface potential calculation and drain current model for junctionless double-gate polysilicon TFTs" (2014). Faculty Bibliography 2010s. 5246.