Decoherence and quantum interference assisted electron trapping in a quantum dot
Abbreviated Journal Title
Phys. Status Solidi B-Basic Solid State Phys.
electronic states; electronic transport; nanostructures; quantum dots; semiconductors; RELAXATION; STATES; Physics, Condensed Matter
We present a theoretical model for the dynamics of an electron that gets trapped by means of decoherence and quantum interference in the central quantum dot (QD) of a semiconductor nanoring (NR) made of five QDs, between 100 and 300 K. The electron's dynamics is described by a master equation with a Hamiltonian based on the tight-binding model, taking into account electron-LO phonon interaction. Based on this configuration, the probability to trap an electron with no decoherence is almost 27%. In contrast, the probability to trap an electron with decoherence is 70% at 100 K, 63% at 200 K and 58% at 300 K. Our model provides a novel method of trapping an electron at room temperature. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Physica Status Solidi B-Basic Solid State Physics
"Decoherence and quantum interference assisted electron trapping in a quantum dot" (2014). Faculty Bibliography 2010s. 5296.