Title

A Reliable Si3N4/Al2O3-HfO2 Stack MIM Capacitor for High-Voltage Analog Applications

Authors

Authors

C. S. Ho; S. J. Chang; S. C. Chen; J. J. Liou;H. G. Li

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

Atomic layer deposition (ALD); capacitance density; high-k; laminated; Al2O3-HfO2 (LAHO) insulator; metal-insulator-metal (MIM) capacitor; time-dependent dielectric breakdown (TDDB); voltage linearity; DIELECTRICS; HFO2; Engineering, Electrical & Electronic; Physics, Applied

Abstract

In this paper, we propose for the first time an attractive Si3N4/laminated Al2O3-HfO2 (LAHO) stack metal-insulator-metal (MIM) capacitor with a low-leakage characteristic, good voltage linearity, high capacitance density, and excellent time-dependent dielectric breakdown (TDDB) reliability. The capacitor demonstrates a capacitance density of 4.2 fF/mu m(2), quadratic voltage coefficients (alpha) of 106 ppm/V-2, and 18.92-year TDDB lifetime under a stressing voltage of 6.6 V. For the extended performance, it is projected that such a capacitor can possess a maximum capacitance density of 4.13 fF/mu m(2) with alpha <= 100 ppm/V-2 and TDDB lifetime of 10 years under an analog operation of 7 V. Furthermore, this paper shows that a and TDDB lifetime of the new capacitor are very sensitive to the thickness of the Si3N4 film. Comparison of the new MIM capacitors with the SiO2/HfO2 stack MIM capacitors shows that the SiO2/HfO2 capacitor is more suitable for low-voltage applications, whereas the new Si3N4/LAHO capacitor is superior for operations requiring a higher biasing condition.

Journal Title

Ieee Transactions on Electron Devices

Volume

61

Issue/Number

8

Publication Date

1-1-2014

Document Type

Article

Language

English

First Page

2944

Last Page

2949

WOS Identifier

WOS:000342906200048

ISSN

0018-9383

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