Title

Occupied and unoccupied electronic structure of Na doped MoS2(0001)

Authors

Authors

T. Komesu; D. Le; X. Zhang; Q. Ma; E. F. Schwier; Y. Kojima; M. T. Zheng; H. Iwasawa; K. Shimada; M. Taniguchi; L. Bartels; T. S. Rahman;P. A. Dowben

Comments

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Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

AUGMENTED-WAVE METHOD; MOLYBDENUM-DISULFIDE; MOS2; TRANSISTORS; PHOTOEMISSION; SPECTROSCOPY; POTASSIUM; MECHANISM; SURFACES; BEHAVIOR; Physics, Applied

Abstract

The influence of sodium on the band structure of MoS2(0001) and the comparison of the experimental band dispersion with density functional theory show excellent agreement for the occupied states (angle-resolved photoemission) and qualitative agreement for the unoccupied states (inverse photoemission spectroscopy). Na-adsorption leads to charge transfer to the MoS2 surface causing an effect similar to n-type doping of a semiconductor. The MoS2 occupied valence band structure shifts rigidly to greater binding with little change in the occupied state dispersion. Likewise, the unoccupied states shift downward, approaching the Fermi level, yet the amount of the shift for the unoccupied states is greater than that of the occupied states, effectively causing a narrowing of the MoS2 bandgap. (C) 2014 AIP Publishing LLC.

Journal Title

Applied Physics Letters

Volume

105

Issue/Number

24

Publication Date

1-1-2014

Document Type

Article

Language

English

First Page

4

WOS Identifier

WOS:000346643600019

ISSN

0003-6951

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