Title

Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures

Authors

Authors

A. V. Muravjov; D. B. Veksler; V. V. Popov; O. V. Polischuk; N. Pala; X. Hu; R. Gaska; H. Saxena; R. E. Peale;M. S. Shur

Comments

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Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

aluminium compounds; gallium compounds; high electron mobility; transistors; III-V semiconductors; plasmonics; terahertz waves; wide; band gap semiconductors; FIELD-EFFECT TRANSISTOR; INVERSION-LAYERS; DETECTORS; MODES; Physics, Applied

Abstract

Strong plasmon resonances have been observed in the terahertz transmission spectra (1-5 THz) of large-area slit-grating-gate AlGaN/GaN-based high-electron-mobility transistor (HEMT) structures at temperatures from 10 to 170 K. The resonance frequencies correspond to the excitation of plasmons with wave vectors equal to the reciprocal lattice vectors of the metal grating, which serves both as a gate electrode for the HEMT and a coupler between plasmons and incident terahertz radiation. Wide tunability of the resonances by the applied gate voltage demonstrates potential of these devices for terahertz applications.

Journal Title

Applied Physics Letters

Volume

96

Issue/Number

4

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000274179900036

ISSN

0003-6951

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