Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures
Abbreviated Journal Title
Appl. Phys. Lett.
aluminium compounds; gallium compounds; high electron mobility; transistors; III-V semiconductors; plasmonics; terahertz waves; wide; band gap semiconductors; FIELD-EFFECT TRANSISTOR; INVERSION-LAYERS; DETECTORS; MODES; Physics, Applied
Strong plasmon resonances have been observed in the terahertz transmission spectra (1-5 THz) of large-area slit-grating-gate AlGaN/GaN-based high-electron-mobility transistor (HEMT) structures at temperatures from 10 to 170 K. The resonance frequencies correspond to the excitation of plasmons with wave vectors equal to the reciprocal lattice vectors of the metal grating, which serves both as a gate electrode for the HEMT and a coupler between plasmons and incident terahertz radiation. Wide tunability of the resonances by the applied gate voltage demonstrates potential of these devices for terahertz applications.
Applied Physics Letters
"Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures" (2010). Faculty Bibliography 2010s. 570.