A Novel Product-Level Human Metal Model Characterization Methodology
Abbreviated Journal Title
IEEE Trans. Device Mater. Reliab.
Electrostatic discharges; human metal model; product level; characterization; Engineering, Electrical & Electronic; Physics, Applied
A new methodology for characterizing product-level failures due to the human metal model (HMM) stress is proposed and developed. This characterization framework is superior to the conventional leakage current-based approach, and it enables early wafer-level assessment of integrated circuits' HMM robustness. The new method is demonstrated in two amplifiers and is benchmarked versus the conventional leakage current method and the industry standard system-level IEC gun testing.
Ieee Transactions on Device and Materials Reliability
"A Novel Product-Level Human Metal Model Characterization Methodology" (2014). Faculty Bibliography 2010s. 5739.