Title

In Situ ESD Protection Structure for Variable Operating Voltage Interface Applications in 28-nm CMOS Process

Authors

Authors

S. R. Luo; J. A. Salcedo; S. Parthasarathy; Y. Z. Zhou; J. J. Hajjar;J. J. Liou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Trans. Device Mater. Reliab.

Keywords

28 nm CMOS; converters; monolithic IO ESD protection; RF ICS; CAPACITANCE; CIRCUITS; SIGNAL; Engineering, Electrical & Electronic; Physics, Applied

Abstract

A multiple-discharge-path electrostatic discharge (ESD) cell for protecting input/output (IO) pins with a variable operating voltage (0.5-3.5 V) is presented. This device is optimized for low capacitance and synthesized with the circuit IO components for in situ ESD protection in communication interface applications developed in the 28-nm high-k metal-gate CMOS technology.

Journal Title

Ieee Transactions on Device and Materials Reliability

Volume

14

Issue/Number

4

Publication Date

1-1-2014

Document Type

Article

Language

English

First Page

1061

Last Page

1067

WOS Identifier

WOS:000345984600018

ISSN

1530-4388

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