Authors

K. W. Wang; X. Q. Li; B. S. Ma; Y. G. Wang; L. G. Zhang;L. A. An

Comments

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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

ALPHA-SI-H; TRANSPORT-PROPERTIES; HIGH-TEMPERATURE; ABSORPTION; SEMICONDUCTORS; SPECTRA; MEMS; Physics, Applied

Abstract

The electronic structure of polymer-derived amorphous silicon carbide ceramics was studied by combining measurements of temperature-dependent conductivity and optical absorption. By comparing the experimental results to theoretical models, electronic structure was constructed for a carbon-rich amorphous silicon carbide, which revealed several unique features, such as deep defect energy level, wide band-tail band, and overlap between the band-tail band and defect level. These unique features were discussed in terms of the microstructure of the material and used to explain the electric behavior.

Journal Title

Applied Physics Letters

Volume

104

Issue/Number

22

Publication Date

1-1-2014

Document Type

Article

Language

English

First Page

4

WOS Identifier

WOS:000337161700022

ISSN

0003-6951

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