Title

On electronic structure of polymer-derived amorphous silicon carbide ceramics

Authors

Authors

K. W. Wang; X. Q. Li; B. S. Ma; Y. G. Wang; L. G. Zhang;L. A. An

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

ALPHA-SI-H; TRANSPORT-PROPERTIES; HIGH-TEMPERATURE; ABSORPTION; SEMICONDUCTORS; SPECTRA; MEMS; Physics, Applied

Abstract

The electronic structure of polymer-derived amorphous silicon carbide ceramics was studied by combining measurements of temperature-dependent conductivity and optical absorption. By comparing the experimental results to theoretical models, electronic structure was constructed for a carbon-rich amorphous silicon carbide, which revealed several unique features, such as deep defect energy level, wide band-tail band, and overlap between the band-tail band and defect level. These unique features were discussed in terms of the microstructure of the material and used to explain the electric behavior. (C) 2014 AIP Publishing LLC.

Journal Title

Applied Physics Letters

Volume

104

Issue/Number

22

Publication Date

1-1-2014

Document Type

Article

Language

English

First Page

4

WOS Identifier

WOS:000337161700022

ISSN

0003-6951

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