Hot Carrier Injection Stress Effect on a 65 nm LNA at 70 GHz
Abbreviated Journal Title
IEEE Trans. Device Mater. Reliab.
Hot electron; low noise amplifier; noise figure; radio frequency; small-signal power gain; CMOS; NOISE; PERFORMANCE; DEGRADATION; TRANSISTORS; AMPLIFIER; NMOSFETS; Engineering, Electrical & Electronic; Physics, Applied
The hot carrier injection stress effect on a 65 nm low-noise amplifier at the 70 GHz range of operation has been studied. The experimental data show that the minimum noise figure increases (similar to 2 dB) and the maximum small-signal power gain decreases (similar to 3 dB) after 10 h of HCI overstress due to transconductance degradation as evidenced by 65 nm individual transistor measurement.
Ieee Transactions on Device and Materials Reliability
"Hot Carrier Injection Stress Effect on a 65 nm LNA at 70 GHz" (2015). Faculty Bibliography 2010s. 6349.