Triple-junction contribution to diffusion in nanocrystalline Si
Abbreviated Journal Title
Appl. Phys. Lett.
diffusion; elemental semiconductors; germanium; grain boundaries; grain; boundary diffusion; nanostructured materials; semiconductor; heterojunctions; silicon; POLYCRYSTALLINE; Physics, Applied
The influence of triple-junctions on experimental Ge diffusion profiles (850-1000 degrees C) in nanocrystalline Si is investigated using three-dimensional finite element simulations. We found that triple-junction diffusion is not negligible in nanocrystalline Si made of 40 nm wide grains. Ge triple-junction diffusion coefficient follows the Arrhenius law 5.72x10(4) exp(-3.24 eV/kT)cm(2) s(-1). It is approximately 4.7x10(2) times higher than grain boundary diffusion coefficient, even though diffusion in triple-junction and in grain boundary exhibits similar activation energy. (C) 2010 American Institute of Physics. [doi:10.1063/1.3435476]
Applied Physics Letters
"Triple-junction contribution to diffusion in nanocrystalline Si" (2010). Faculty Bibliography 2010s. 651.