Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
diffusion; elemental semiconductors; germanium; grain boundaries; grain; boundary diffusion; nanostructured materials; semiconductor; heterojunctions; silicon; POLYCRYSTALLINE; Physics, Applied
Abstract
The influence of triple-junctions on experimental Ge diffusion profiles (850-1000 degrees C) in nanocrystalline Si is investigated using three-dimensional finite element simulations. We found that triple-junction diffusion is not negligible in nanocrystalline Si made of 40 nm wide grains. Ge triple-junction diffusion coefficient follows the Arrhenius law 5.72x10(4) exp(-3.24 eV/kT)cm(2) s(-1). It is approximately 4.7x10(2) times higher than grain boundary diffusion coefficient, even though diffusion in triple-junction and in grain boundary exhibits similar activation energy.
Journal Title
Applied Physics Letters
Volume
96
Issue/Number
21
Publication Date
1-1-2010
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Portavoce, A.; Chow, L.; and Bernardini, J., "Triple-junction contribution to diffusion in nanocrystalline Si" (2010). Faculty Bibliography 2010s. 651.
https://stars.library.ucf.edu/facultybib2010/651
Comments
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