Title

Silicon-Controlled Rectifier for Electrostatic Discharge Protection Solutions With Minimal Snapback and Reduced Overshoot Voltage

Authors

Authors

R. C. Sun; Z. X. Wang; M. Klebanov; W. Liang; J. J. Liou;D. G. Liu

Comments

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Abbreviated Journal Title

IEEE Electron Device Lett.

Keywords

ESD; direct-connected; SCR; stacking; overshoot; SCR-BASED DEVICES; ESD PROTECTION; TECHNOLOGIES; DESIGN; SPEED; Engineering, Electrical & Electronic

Abstract

An electrostatic discharge (ESD) protection structure constructed by the stacking of multiple anode gate-cathode gate directly connected silicon-controlled rectifiers (DCSCRs), fabricated in a 0.18-mu m CMOS technology is reported in this letter. Two embedded diodes in the DCSCR dictate the turn-ON mechanism and hence give rise to a trigger voltage equal to twice the diode's turn-ON voltage. This approach enables the DCSCR to offer a diode-like transmission line pulsing IV characteristic with a minimal snapback and a SCR-like high-ESD robustness. At 25 degrees C, DCSCR has an acceptable nanoampere-level leakage current. Besides, it is verified that the DCSCR can significantly reduce overshoot voltage when stressed by very-fast-rising pulses. As such, an ESD clamp constructed by stacking a selected number of DCSCRs can offer a flexible trigger/holding voltage and is suitable for low and medium voltage ESD protection applications.

Journal Title

Ieee Electron Device Letters

Volume

36

Issue/Number

5

Publication Date

1-1-2015

Document Type

Article

Language

English

First Page

424

Last Page

426

WOS Identifier

WOS:000353566300001

ISSN

0741-3106

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