Authors

J. P. Toinin; A. Portavoce; K. Hoummada; M. Texier; M. Bertoglio; S. Bernardini; M. Abbarchi;L. Chow

Comments

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Abbreviated Journal Title

Beilstein J. Nanotechnol.

Keywords

germanium; ion implantation; porous material; POROUS GERMANIUM; SILICON NANOCRYSTALS; ION-IMPLANTATION; LIGHT-EMISSION; SI; AMORPHIZATION; TEMPERATURE; MORPHOLOGY; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied

Abstract

In this work a novel process allowing for the production of nanoporous Ge thin films is presented. This process uses the combination of two techniques: Ge sputtering on SiO2 and dopant ion implantation. The process entails four successive steps: (i) Ge sputtering on SiO2, (ii) implantation preannealing, (iii) high-dose dopant implantation, and (iv) implantation postannealing. Scanning electron microscopy and transmission electron microscopy were used to characterize the morphology of the Ge film at different process steps under different postannealing conditions. For the same postannealing conditions, the Ge film topology was shown to be similar for different implantation doses and different dopants. However, the film topology can be controlled by adjusting the postannealing conditions.

Journal Title

Beilstein Journal of Nanotechnology

Volume

6

Publication Date

1-1-2015

Document Type

Article

Language

English

First Page

336

Last Page

342

WOS Identifier

WOS:000348978300001

ISSN

2190-4286

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