Title

Dispersion measurements of a 1.3 mu m quantum dot semiconductor optical amplifier over 120 nm of spectral bandwidth

Authors

Authors

M. Bagnell; J. Davila-Rodriguez; A. Ardey;P. J. Delfyett

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

excited states; ground states; laser variables measurement; light; interferometry; optical dispersion; quantum dot lasers; semiconductor; optical amplifiers; wavelet transforms; WAVELET-TRANSFORM ANALYSIS; GROUP DELAY; INTERFEROMETRY; LASERS; Physics, Applied

Abstract

Group delay and higher order dispersion measurements are conducted on a 1.3 mu m quantum dot semiconductor optical amplifier at various injection currents. White-light spectral interferometry is performed, along with a wavelet transform to recover the group delay. The group delay, group velocity dispersion, and higher order dispersion terms are quantified. The measurement spans both ground state and first excited state transitions, ranging from 1200 to 1320 nm. The group velocity dispersion, beta(2), is found to be -6.3x10(3) fs(2) (7.6 fs/nm) at an injection current of 500 mA. (C) 2010 American Institute of Physics. [doi:10.1063/1.3430742]

Journal Title

Applied Physics Letters

Volume

96

Issue/Number

21

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000278183200029

ISSN

0003-6951

Share

COinS