B diffusion in implanted Ni2Si and NiSi layers
Abbreviated Journal Title
Appl. Phys. Lett.
annealing; boron; diffusion; doping profiles; ion implantation; metallic; thin films; nickel alloys; secondary ion mass spectra; silicon alloys; solubility; surface chemistry; AMORPHOUS-SILICON CRYSTALLIZATION; THERMAL-STABILITY; CMOS; SI; REDISTRIBUTION; SILICIDATION; TECHNOLOGIES; Physics, Applied
B diffusion in implanted Ni2Si and NiSi layers has been studied using secondary ion mass spectrometry, and compared to B redistribution profiles obtained after the reaction of a Ni layer on a B-implanted Si(001) substrate, in same annealing conditions (400-550 degrees C). B diffusion appears faster in Ni2Si than in NiSi. The B solubility limit is larger than 10(21) atom cm(-3) in Ni2Si, while it is similar to 3x10(19) atom cm(-3) in NiSi. The solubility limit found in NiSi is in agreement with the plateau observed in B profiles measured in NiSi after the reaction of Ni on B-implanted Si.
Applied Physics Letters
"B diffusion in implanted Ni2Si and NiSi layers" (2010). Faculty Bibliography 2010s. 7005.