Title

B diffusion in implanted Ni2Si and NiSi layers

Authors

Authors

I. Blum; A. Portavoce; L. Chow; D. Mangelinck; K. Hoummada; G. Tellouche;V. Carron

Comments

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Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

annealing; boron; diffusion; doping profiles; ion implantation; metallic; thin films; nickel alloys; secondary ion mass spectra; silicon alloys; solubility; surface chemistry; AMORPHOUS-SILICON CRYSTALLIZATION; THERMAL-STABILITY; CMOS; SI; REDISTRIBUTION; SILICIDATION; TECHNOLOGIES; Physics, Applied

Abstract

B diffusion in implanted Ni2Si and NiSi layers has been studied using secondary ion mass spectrometry, and compared to B redistribution profiles obtained after the reaction of a Ni layer on a B-implanted Si(001) substrate, in same annealing conditions (400-550 degrees C). B diffusion appears faster in Ni2Si than in NiSi. The B solubility limit is larger than 10(21) atom cm(-3) in Ni2Si, while it is similar to 3x10(19) atom cm(-3) in NiSi. The solubility limit found in NiSi is in agreement with the plateau observed in B profiles measured in NiSi after the reaction of Ni on B-implanted Si.

Journal Title

Applied Physics Letters

Volume

96

Issue/Number

5

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000274319500124

ISSN

0003-6951

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