Title

Optical Properties of Heavily Al-Doped Single-Crystal Si3N4 Nanobelts

Authors

Authors

F. M. Gao; Y. S. Wang; L. G. Zhang; W. Y. Yang;L. A. An

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Am. Ceram. Soc.

Keywords

HYDROGENATED SILICON-NITRIDE; THIN-FILMS; PHOTOLUMINESCENCE; NANOWIRES; LUMINESCENCE; PYROLYSIS; SINX; Materials Science, Ceramics

Abstract

The optical properties of heavily Al-doped single-crystal Si3N4 nanobelts are investigated by measuring their absorption, photoluminescence, and photoluminescence excitation spectra. The results suggest that the doped Si3N4 exhibit two absorptions at 2.5 and 4.2 eV, instead of absorption at 5.0 eV in the pure Si3N4. The doped nanobelts show light emissions in a range of 1.4 to 3.6 eV, which is red-shifted as compared with that of pure Si3N4 nanobelts. These results are ascribed to the unique doping mechanism of Al, which generates two types of defects.

Journal Title

Journal of the American Ceramic Society

Volume

93

Issue/Number

5

Publication Date

1-1-2010

Document Type

Article

DOI Link

http://dx.doi.org/10.1111/j.1551-2916.2009.03517.x

Language

English

First Page

1364

Last Page

1367

WOS Identifier

WOS:000277083500027

ISSN

0002-7820

Recommended Citation

"Optical Properties of Heavily Al-Doped Single-Crystal Si3N4 Nanobelts" (2010). Faculty Bibliography 2010s. 7052.
https://stars.library.ucf.edu/facultybib2010/7052