Snapback and Postsnapback Saturation of Pseudomorphic High-Electron Mobility Transistor Subject to Transient Overstress
Abbreviated Journal Title
IEEE Electron Device Lett.
Electrostatic discharge (ESD); high-electron mobility transistor; saturation; snapback; Engineering, Electrical & Electronic
The snapback and postsnapback saturation characteristics in a pseudomorphic high-electron mobility transistor (PHEMT) subject to electrostatic discharge (ESD) transient over-stress are studied. This is undertaken, for the first time, via transmission line pulsing (TLP)-like 2-D device simulations and benchmarked against TLP measurements. Physical mechanisms underlying the postsnapback behavior and ESD-induced failure are identified and discussed by analyzing TLP-like simulation results rather than extrapolating dc-like numerical simulation data.
Ieee Electron Device Letters
"Snapback and Postsnapback Saturation of Pseudomorphic High-Electron Mobility Transistor Subject to Transient Overstress" (2010). Faculty Bibliography 2010s. 75.