Title

Evaluating Defects in Solution-Processed Carbon Nanotube Devices via Low-Temperature Transport Spectroscopy

Authors

Authors

P. Stokes;S. I. Khondaker

Comments

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Abbreviated Journal Title

ACS Nano

Keywords

solution-processed; single electron transistor; nanotube; electron; transport; transport spectroscopy; defects; FIELD-EFFECT TRANSISTORS; QUANTUM DOTS; ELECTRICAL-TRANSPORT; RAMAN-SPECTROSCOPY; ROOM-TEMPERATURE; COULOMB-BLOCKADE; Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience &; Nanotechnology; Materials Science, Multidisciplinary

Abstract

We performed low-temperature electron transport spectroscopy to evaluate defects in individual single-walled carbon nanotube (SWNT) devices assembled via dielectrophoresis from a surfactant-free solution. At 4.2 K, the majority of the devices show periodic and well-defined Coulomb diamonds near zero gate voltage corresponding to transport through a single quantum dot, while at higher gate voltages, beating behavior is observed due to small potential fluctuations induced by the substrate. The Coulomb diamonds were further modeled using a single electron transistor simulator. Our study suggests that SWNTs derived from stable solutions in this work are free from hard defects and are relatively clean. Our observations have strong implications on the use of solution-processed SWNTs for future nanoelectronic device applications.

Journal Title

Acs Nano

Volume

4

Issue/Number

5

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

2659

Last Page

2666

WOS Identifier

WOS:000277976900023

ISSN

1936-0851

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