Title

Ostwald Ripening Growth of Silicon Nitride Nanoplates

Authors

Authors

W. Y. Yang; F. M. Gao; G. D. Wei;L. A. An

Comments

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Abbreviated Journal Title

Cryst. Growth Des.

Keywords

SINGLE-SOURCE PRECURSOR; HIGH-YIELD SYNTHESIS; OPTICAL-PROPERTIES; GOLD; CRYSTALLINE; SILVER; NANOBELTS; THIN; PHOTOLUMINESCENCE; MONODISPERSE; Chemistry, Multidisciplinary; Crystallography; Materials Science, ; Multidisciplinary

Abstract

In this paper, we have demonstrated the Oswald ripening growth of single-crystalline Si3N4 nanoplates. The formation of the plates involves three basic steps: formation and aggregation of the nanoparticles, grain coalescence within selective areas, and growth of one coarsened grain at the expense of the rest of the nanoparticles via an Oswald ripening process assisted by the oriented attachment mechanism. The obtained nanoplates exhibit an extremely high aspect ratio with an ultrathin thickness, flat Surface, and perfect crystal structure, and they could be utilized as substrates for constructing nanodevices.

Journal Title

Crystal Growth & Design

Volume

10

Issue/Number

1

Publication Date

1-1-2010

Document Type

Article

DOI Link

http://dx.doi.org/10.1021/cg901148q

Language

English

First Page

29

Last Page

31

WOS Identifier

WOS:000274757100007

ISSN

1528-7483

Recommended Citation

"Ostwald Ripening Growth of Silicon Nitride Nanoplates" (2010). Faculty Bibliography 2010s. 977.
https://stars.library.ucf.edu/facultybib2010/977