An extremely non-degenerate two photon absorption (END-2PA) method and apparatus provide for irradiating a semiconductor material substrate simultaneously with two photons each of different energy less than a bandgap energy of the semiconductor material substrate but in an aggregate greater than the bandgap energy of the semiconductor material substrate. A ratio of a higher energy photon energy to a lower energy is at least about 3.0. Alternatively, or as an adjunct, the higher energy and the lower energy photon has an energy no greater than about 25% of the bandgap energy.
Application Serial Number
Assignee at Issuance
College of Optics and Photonics
Assignee at Filing
Nonprovisional Application Record
Vanstryland, Eric and Hagan, David, "Extremely Non-Degenerate Two Photon Absorption Sensing Method, Apparatus, and Applications" (2014). UCF Patents. 176.