A sensor for selectively determining the presence and measuring the amount of hydrogen in the vicinity of the sensor. The sensor comprises a MEMS device coated with a nanostructured thin film of indium oxide doped tin oxide with an over layer of nanostructured barium cerate with platinum catalyst nanoparticles. Initial exposure to a UV light source, at room temperature, causes burning of organic residues present on the sensor surface and provides a clean surface for sensing hydrogen at room temperature. A giant room temperature hydrogen sensitivity is observed after making the UV source off. The hydrogen sensor of the invention can be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently used at room temperature.
Application Serial Number
Assignee at Issuance
College of Engineering and Computer Science (CECS)
Mechanical and Aerospace Engineering
Assignee at Filing
Nonprovisional Application Record
Cho, Hyoung; Ludwig, Lawrence; Seal, Sudipta; and Shukla, Satyajit, "Fabrication Method for a Room Temperature Hydrogen Sensor DIV" (2011). UCF Patents. 177.