The method for the fabrication of nano scale temperature sensors and nano scale heaters using focused ion beam (FIB) techniques. The process used to deposit metal nano strips to form a sensor is ion beam assisted chemical vapor deposition (CVD). The FIB Ga.sup.+ ion beam can be used to decompose W(CO).sub.6 molecules to deposit a tungsten nano-strip on a suitable substrate. The same substrate can also be used for Pt nano-strip deposition. The precursors for the Pt can be trimethyl platinum (CH.sub.3).sub.3Pt in the present case. Because of the Ga.sup.+ beam used in the deposition, both Pt and W nano-strips can contain a certain percentage of Ga impurities, which we denoted as Pt(Ga) and W(Ga) respectively. Our characterization of the response of this Pt(Ga)/W(Ga) nano scale junction indicates it has a temperature coefficient of approximately 5.4 mV/.degree. C. This is a factor of approximately 130 larger than the conventional K-type thermocouples.
Application Serial Number
Assignee at Issuance
College of Sciences
Assignee at Filing
Nonprovisional Application Record
Chow, Lee; Stevie, Fred; and Zhou, Dan, "Fabrication of Nano-Scale Temperature Sensors and Heaters. DIV" (2006). UCF Patents. 180.