Abstract

Silicon carbide (SiC)and other wide band-gap semiconductors offer great promise of high power rating, high operating temperature, simple thermal managment, and ultra-high power density for both military and commercial power electronic systems. However, this great potential is seriously limited by the lack of reliabe high temperature device packaging technology. This invention is to provide a cost-effective, ultra-compact, hybrid power module packaging technology that allows device operation at over 300 degrees Celcius to leverage recent advances in SiCi and other wide band-gap semiconductor material. The inention is based on the use of double metal leadframes directly bonded o the front and backside of semiconductor chips, and injection molded high temperature polymer materials to form the module encapsulation. The invention eliminates the use of the unreliable metal wirebonds and solder joints, and expensive aluminum nitride ceramic substrate commonly used in prior-art conventional an

Document Type

Patent

Patent Number

US 8,120,153

Application Serial Number

11/521,176

Issue Date

2-21-2012

Current Assignee

UCFRF

Assignee at Issuance

UCFRF

College

College of Engineering and Computer Science (CECS)

Department

Electrical & Computer Engineering

Allowance Date

10-11-2011

Filing Date

9-14-2006

Assignee at Filing

UCFRF

Filing Type

Nonprovisional Application Record

Donated

no

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