Silicon carbide (SiC)and other wide band-gap semiconductors offer great promise of high power rating, high operating temperature, simple thermal managment, and ultra-high power density for both military and commercial power electronic systems. However, this great potential is seriously limited by the lack of reliabe high temperature device packaging technology. This invention is to provide a cost-effective, ultra-compact, hybrid power module packaging technology that allows device operation at over 300 degrees Celcius to leverage recent advances in SiCi and other wide band-gap semiconductor material. The inention is based on the use of double metal leadframes directly bonded o the front and backside of semiconductor chips, and injection molded high temperature polymer materials to form the module encapsulation. The invention eliminates the use of the unreliable metal wirebonds and solder joints, and expensive aluminum nitride ceramic substrate commonly used in prior-art conventional an
Application Serial Number
Assignee at Issuance
College of Engineering and Computer Science (CECS)
Electrical & Computer Engineering
Assignee at Filing
Nonprovisional Application Record
Shen, Zheng, "High-Temperature, Wirebondless, Injection-Molded, Ultra-Compact Hybrid Power Module" (2012). UCF Patents. 244.