Abstract

A frequency selective surface-based (FSS-based) device (200) for processing electromagnetic waves providing at least a third order response. The FSS-based device includes a first FSS (202), a second FSS (210), and a high quality factor (Q) FSS (206) interposed between the first and second FSSs. A first dielectric layer (204) and a second dielectric layer (208) separate the respective FSS layers. The first and second FSSs have the first and second primary resonant frequencies, respectively. The high Q FSS has a lower primary resonant frequency relative to the first and second primary resonant frequencies. The overall electrical thickness of the FSS device can be < 1/10 of a nano. The high Q FSS has a loaded quality factor of at least thirty at the lower primary resonant frequency.

Document Type

Patent

Patent Number

US 7,639,206

Application Serial Number

12/115,188

Issue Date

12-29-2009

Current Assignee

UCFRF

Assignee at Issuance

UCFRF

College

College of Engineering and Computer Science (CECS)

Department

Electrical Engineering & Computer Science - CS Division

Allowance Date

11-12-2009

Filing Date

5-5-2008

Assignee at Filing

UCFRF

Filing Type

Nonprovisional Application Record

Donated

no

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