Abstract

The subject of this invention are method and system for enhancing performance characteristics (quantum efficiency, photoresponse, and spectral range) in photon detectors and solar cells (both of which are referred to as photon devices). The photon detectors are p-n junctions and/or Schottky barrier diodes. The solar cells are p-n junctions. The method and system can include injecting electrons into a p-region of a photon detector or solar cell over a selected time period of up to approximately 1500 seconds to control and improve minority carrier transport, in particular a diffusion length. The injection of electrons can occur periodically over several days and can occur under a o forward bias of the p-n junction or Schottky barrier. Improvements in quantum efficiency can be between approximately 2 to approximately 5 fold. The performance output of the device can be automatically sensed with computer type logic circuits, to actively control in real time the electron injection and to maximize performance results.

Document Type

Patent

Patent Number

US 6,674,064

Application Serial Number

10/192,279

Issue Date

1-6-2004

Current Assignee

UCFRF

Assignee at Issuance

UCFRF

College

College of Sciences

Department

Physics

Allowance Date

9-10-2003

Filing Date

7-10-2002

Assignee at Filing

UCFRF

Filing Type

Nonprovisional Application Record

Donated

no

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