Single-stripe GaAs/AlGaAs semiconductor optical amplifiers which simultaneously generates from four to more than twenty tunable WDM channels. A four channel version trsnsmits approximately 12 picosecond pulses at approximately 2.5 GHz for an aggregate pulse rate of 100 GHz. Wavelength tuning over 18 nm has been demonstrated with channel spacing ranging from approximately 0.8 nm to approximately 2 nm. A second version uses approximately 20 wavelength channels, each transmitting approximately 12 picosecond pulses at a rate of approximately 600 MHz. A spectral correlation across the multiwavelength spectrum which can be for utilizing single stripe laser diodes as multiwavelength sources in WDM-TDM networks. A third version of multiple wavelength generation uses a fiber-array and grating. And a fourth version of wavelength generation uses a Fabry-Perot Spectral filter. Also solid state laser sources and optical fiber laser sources can be used.
Application Serial Number
Assignee at Issuance
College of Optics and Photonics
Assignee at Filing
Nonprovisional Application Record
Delfyett, Peter and Shi, Hong, "Multiwavelength Modelocked Semiconductor Diode Laser" (2003). UCF Patents. 403.