A method of forming crystalline semiconducting layers on low melting or low softening point substrates includes the steps of providing an aqueous solution medium including a plurality of semiconductor nanoparticles dispersed therein having a median size less than 10 nm, and applying the solution medium to at least one region of a substrate to be coated. The substrate has a melting or softening point of
US 8,227,325 B2
Application Serial Number
Assignee at Issuance
College of Optics and Photonics
Assignee at Filing
Nonprovisional Application Record
Kar, Aravinda and Bet, Sachin, "Articles Comprising Crystalline Layers on Low Temperature Substrates" (2012). UCF Patents. 43.