A process is disclosed for in-situ fabricating a semiconductor component imbedded in a substrate. A substrate is ablated with a first laser beam to form a void therein. A first conductive element is formed in the void of the substrate with a second laser beam. A semiconductor material is deposited upon the first conductive element with a third laser beam operating in the presence of a depositing atmosphere. A second conductive element is formed on the first semiconductor material with a fourth laser beam. The process may be used for fabricating a Schottky barrier diode or a junction field effect transistor and the like.
Application Serial Number
Joint Assignment w/UCFRF: FRIJOUF, ROBERT F.
Assignee at Issuance
College of Optics and Photonics
Assignee at Filing
Joint Assignment w/UCFRF: American Automobile Manufacturing Association
Nonprovisional Application Record
Kar, Aravinda; Quick, Nathaniel; and Salama, Islam, "Process for Fabricating Semiconductor Component" (2007). UCF Patents. 478.