Abstract

A process is disclosed for in-situ fabricating a semiconductor component imbedded in a substrate. A substrate is ablated with a first laser beam to form a void therein. A first conductive element is formed in the void of the substrate with a second laser beam. A semiconductor material is deposited upon the first conductive element with a third laser beam operating in the presence of a depositing atmosphere. A second conductive element is formed on the first semiconductor material with a fourth laser beam. The process may be used for fabricating a Schottky barrier diode or a junction field effect transistor and the like.

Document Type

Patent

Patent Number

US 7,268,063

Application Serial Number

11/141,913

Issue Date

9-11-2007

Current Assignee

Joint Assignment w/UCFRF: FRIJOUF, ROBERT F.

Assignee at Issuance

UCFRF

College

College of Optics and Photonics

Department

CREOL

Allowance Date

6-22-2007

Filing Date

6-1-2005

Assignee at Filing

Joint Assignment w/UCFRF: American Automobile Manufacturing Association

Filing Type

Nonprovisional Application Record

Donated

no

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