Abstract

A silicon controlled rectifier (SCR) device having a high holding voltage includes a PNP transistor and an NPN transistor, each transistor having both p-type and n-type dopant regions in their respective emitter areas. The device is particularly suited to high voltage applications, as the high holding voltage provides a device which is more resistant to latchup subsequent to an electrostatic discharge event compared to devices having a low holding voltage.

Document Type

Patent

Patent Number

US 7,842,971

Application Serial Number

12/366,159

Issue Date

11-30-2010

Current Assignee

Joint Assignment w/UCFRF: Intersil Corporation

Assignee at Issuance

Joint Assignment w/UCFRF: Intersil Corporation

College

College of Engineering and Computer Science (CECS)

Department

Electrical & Computer Engineering

Allowance Date

7-26-2010

Filing Date

2-5-2009

Assignee at Filing

Joint Assignment w/UCFRF: Intersil Corporation

Filing Type

Nonprovisional Application Record

Donated

no

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