Abstract

An electrostatic discharge (ESD) device and method is provided. The ESD device can comprise a substrate doped to a first conductivity type, an epitaxial region doped to the second conductivity type, and a first well doped to the first conductivity type disposed in the substrate. The first well can comprise a first region doped to the first conductivity type, a second region doped to a second conductivity type, and a first isolation region disposed between the first region and the second region. The ESD device can also comprise a second well doped to a second conductivity type disposed in the substrate adjacent to the first well, where the second well can comprise a third region doped to the first conductivity type, a fourth region doped to the second conductivity type, and a second isolation region disposed between the third region and the fourth region. Still further, the ESD device can include a first trigger contact and second trigger contact comprising highly doped regions of eithe

Document Type

Patent

Patent Number

US 7,479,414 B2

Application Serial Number

11/871,269

Issue Date

1-20-2009

Current Assignee

Joint Assignment w/UCFRF: Intersil Corporation

Assignee at Issuance

Joint Assignment w/UCFRF: Intersil Corporation

College

College of Engineering and Computer Science (CECS)

Department

Electrical Engineering & Computer Science - CS Division

Allowance Date

9-15-2008

Filing Date

10-12-2007

Assignee at Filing

Joint Assignment w/UCFRF: Intersil Corporation

Filing Type

Nonprovisional Application Record

Donated

no

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