SPRITE Detector Characterization and System Optimization Through Impulse Response Testing

Abstract

Signal Processing In The Element (SPRITE) detectors operating in the 8-12 μm region have been amply characterized in the past few years. They are typically well behaved and the material properties of 8-12μm HgCdTe lend themselves to SPRITE operation. SPRITE detectors operating in the 3-5 μm region, however, are insufficiently characterized and the material presents several design challenges. This paper presents an approach to SPRITE characterization which, through a single test, delivers carrier lifetime, mobility and drift velocity versus bar length. These parameters may easily be tested over temperature and various bias voltages. Using this data, the 3-5 μm (or 8-12 μm) SPRITE detector configuration for optimal system performance may be determined and the system performance predicted. A method of performance prediction which uses elemental parameters and does not rely on artificial detector area or the number of equivalent elements will be presented.

Notes

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Graduation Date

1989

Semester

Fall

Advisor

Boreman, Glenn

Degree

Master of Science (M.S.)

College

College of Engineering

Department

Electrical Engineering and Communication Sciences

Format

PDF

Pages

69 p.

Language

English

Length of Campus-only Access

None

Access Status

Masters Thesis (Open Access)

Identifier

DP0026626

Subjects

Dissertations, Academic -- Engineering; Engineering -- Dissertations, Academic

Accessibility Status

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