Keywords
Microwave amplifiers -- Noise, Microwave transistors -- Noise
Abstract
The Gallium Arsenide Field Effect transistor (GaAs FET) is experiencing a widespread acceptance in space and terrestrial systems due to its low noise, high gain and frequency characteristics unmatched by bipolar devices. This paper describes a design of a 4 GHz low noise amplifier with GaAs FETs using the scattering parameters method. Special attention is given to overall noise/gain optimization in the band of interest. The Smith Chart is used extensively to match the two-port device with microstrip networks. Analysis and performance of the amplifier are presented.
Notes
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Graduation Date
1985
Semester
Fall
Advisor
Belkerdid, Madjid A.
Degree
Master of Science (M.S.)
College
College of Engineering
Degree Program
Engineering
Format
Language
English
Rights
Public Domain
Length of Campus-only Access
None
Access Status
Masters Thesis (Open Access)
Identifier
DP0018310
STARS Citation
Al-Rawahy, Abdulla I., "Design and Analysis of a 4GHz Low Noise Amplifier" (1985). Retrospective Theses and Dissertations. 4810.
http://stars.library.ucf.edu/rtd/4810
Contributor (Linked data)
University of Central Florida. College of Engineering [VIAF]