Keywords

Microwave amplifiers -- Noise, Microwave transistors -- Noise

Abstract

The Gallium Arsenide Field Effect transistor (GaAs FET) is experiencing a widespread acceptance in space and terrestrial systems due to its low noise, high gain and frequency characteristics unmatched by bipolar devices. This paper describes a design of a 4 GHz low noise amplifier with GaAs FETs using the scattering parameters method. Special attention is given to overall noise/gain optimization in the band of interest. The Smith Chart is used extensively to match the two-port device with microstrip networks. Analysis and performance of the amplifier are presented.

Notes

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Graduation Date

1985

Semester

Fall

Advisor

Belkerdid, Madjid A.

Degree

Master of Science (M.S.)

College

College of Engineering

Degree Program

Engineering

Format

PDF

Language

English

Rights

Public Domain

Length of Campus-only Access

None

Access Status

Masters Thesis (Open Access)

Identifier

DP0018310

Included in

Engineering Commons

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