Field effect transistors, Hot carriers, Modulation doped field effect transistors, Reliability (Engineering)
A unified study on the hot carrier reliability of the Pseudomorphic High Electron Mobility Transistor (PHEMT) is carried out through Sentaurus Device Simulation, measurement, and physical analyses. A trade study of devices with four various geometries are evaluated for DC and RF performance. The trade-off of DC I-V characteristics, transconductance, and RF parameters versus hot carrier induced gate current is assessed for each device. Ambient temperature variation is also evaluated to observe its impact on hot carrier effects. A commercial grade PHEMT is then evaluated and measured to demonstrate the performance degradation that occurs after a period of operation in an accelerated stress regime— one hour of high drain voltage, low drain current stress. This stress regime and normal operation regime are then modeled through Sentaurus. Output characteristics are shown along with stress mechanisms within the device. Lastly, a means of simulating a PHEMT post-stress is introduced. The approach taken accounts for the activation of dopants near the channel. Post-stress simulation results of DC and RF performance are then investigated.
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Yuan, Jiann S.
Master of Science (M.S.)
College of Engineering and Computer Science
Electrical Engineering and Computer Science
Length of Campus-only Access
Masters Thesis (Open Access)
Dissertations, Academic -- Engineering and Computer Science, Engineering and Computer Science -- Dissertations, Academic
Steighner, Jason, "Investigation And Trade Study On Hot Carrier Reliability Of The Phemt For Dc And Rf Performance" (2011). Electronic Theses and Dissertations. 1797.