Keywords

Power amplifiers, Radio frequency

Abstract

A 5.8 GHz RF Power Amplifier (PA) is designed and fabricated in this work, which has very high linearity through a built-in linearizer. The PA is designed, post-layout simulated by Agilent Advanced Design System (ADS) software and fabricated by Win-Semiconductors 0.15µm pHEMT process technology. The post-layout simulation results illustrate the power amplifier can obtained an output power of 23.98 dBm, a power gain of 32.28 dB and a power added efficiency (PAE) of 29% at saturation region, the 3rd intermodulation distortion (IMD3) of -37.7 dBc at 0 dBm input power is attained when operation frequency is 5.8 GHz. We finally obtain that the output power of 17.97 dBm and power gain of 27.97 dB at input power of -10 dBm, PAE of 11.65% at input power of 0 dBm and the IMD3 of -25.66 dBc at -20 dBm input power by measurement, when operation frequency is 5.2 GHz. So the overall RF performance of the PA demonstrates high power, high efficiency and high linearity.

Notes

If this is your thesis or dissertation, and want to learn how to access it or for more information about readership statistics, contact us at STARS@ucf.edu

Graduation Date

2011

Semester

Spring

Advisor

Yuan, Jiann S.

Degree

Master of Science in Electrical Engineering (M.S.E.E.)

College

College of Engineering and Computer Science

Department

Electrical Engineering and Computer Science

Degree Program

Electrical Engineering

Format

application/pdf

Identifier

CFE0003615

URL

http://purl.fcla.edu/fcla/etd/CFE0003615

Language

English

Length of Campus-only Access

None

Access Status

Masters Thesis (Open Access)

Subjects

Dissertations, Academic -- Engineering and Computer Science, Engineering and Computer Science -- Dissertations, Academic

Download

Share

COinS