Power amplifiers, Radio frequency
A 5.8 GHz RF Power Amplifier (PA) is designed and fabricated in this work, which has very high linearity through a built-in linearizer. The PA is designed, post-layout simulated by Agilent Advanced Design System (ADS) software and fabricated by Win-Semiconductors 0.15µm pHEMT process technology. The post-layout simulation results illustrate the power amplifier can obtained an output power of 23.98 dBm, a power gain of 32.28 dB and a power added efficiency (PAE) of 29% at saturation region, the 3rd intermodulation distortion (IMD3) of -37.7 dBc at 0 dBm input power is attained when operation frequency is 5.8 GHz. We finally obtain that the output power of 17.97 dBm and power gain of 27.97 dB at input power of -10 dBm, PAE of 11.65% at input power of 0 dBm and the IMD3 of -25.66 dBc at -20 dBm input power by measurement, when operation frequency is 5.2 GHz. So the overall RF performance of the PA demonstrates high power, high efficiency and high linearity.
If this is your thesis or dissertation, and want to learn how to access it or for more information about readership statistics, contact us at STARS@ucf.edu
Yuan, Jiann S.
Master of Science in Electrical Engineering (M.S.E.E.)
College of Engineering and Computer Science
Electrical Engineering and Computer Science
Length of Campus-only Access
Masters Thesis (Open Access)
Dissertations, Academic -- Engineering and Computer Science, Engineering and Computer Science -- Dissertations, Academic
Wang, Yiheng, "High Linearity 5.8 Ghz Power Amplifier With An Internal Linearizer" (2011). Electronic Theses and Dissertations. 1988.