Keywords

Computer aided design, Electric discharges, Oxides, Transients (Electricity)

Abstract

A methodology to obtain design guidelines for gate oxide input pin protection and high voltage output pin protection in Electrostatic Discharge (ESD) time frame is developed through measurements and Technology Computer Aided Design (TCAD). A set of parameters based on transient measurements are used to define Transient Safe Operating Area (TSOA). The parameters are then used to assess effectiveness of protection devices for output and input pins. The methodology for input pins includes establishing ESD design targets under Charged Device Model (CDM) type stress in low voltage MOS inputs. The methodology for output pins includes defining ESD design targets under Human Metal Model (HMM) type stress in high voltage Laterally Diffused MOS (LDMOS) outputs. First, the assessment of standalone LDMOS robustness is performed, followed by establishment of protection design guidelines. Secondly, standalone clamp HMM robustness is evaluated and a prediction methodology for HMM type stress is developed based on standardized testing. Finally, LDMOS and protection clamp parallel protection conditions are identified

Notes

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Graduation Date

2012

Semester

Summer

Advisor

Liou, Juin J.

Degree

Doctor of Philosophy (Ph.D.)

College

College of Engineering and Computer Science

Department

Electrical Engineering and Computer Science

Degree Program

Electrical Engineering

Format

application/pdf

Identifier

CFE0004405

URL

http://purl.fcla.edu/fcla/etd/CFE0004405

Language

English

Release Date

August 2012

Length of Campus-only Access

None

Access Status

Doctoral Dissertation (Open Access)

Subjects

Dissertations, Academic -- Engineering and Computer Science, Engineering and Computer Science -- Dissertations, Academic

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