MOSFET, reliability, lifetime, Hot-Carrier, modeling, RF, Verilog-A, simulation, RF, Cadence
Long-term hot-carrier induced degradation of MOS devices has become more severe as the device size continues to scale down to submicron range. In our work, a simple yet effective method has been developed to provide the degradation laws with a better predictability. The method can be easily augmented into any of the existing degradation laws without requiring additional algorithm. With more accurate extrapolation method, we present a direct and accurate approach to modeling empirically the 0.18-ìm MOS reliability, which can predict the MOS lifetime as a function of drain voltage and channel length. With the further study on physical mechanism of MOS device degradation, experimental results indicated that the widely used power-law model for lifetime estimation is inaccurate for deep submicron devices. A better lifetime prediction method is proposed for the deep-submicron devices. We also develop a Spice-like reliability model for advanced radio frequency RF MOS devices and implement our reliability model into SpectreRF circuit simulator via Verilog-A HDL (Hardware Description Language). This RF reliability model can be conveniently used to simulate RF circuit performance degradation
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Liou, Juin J.
Doctor of Philosophy (Ph.D.)
College of Engineering and Computer Science
Electrical and Computer Engineering
Length of Campus-only Access
Doctoral Dissertation (Open Access)
Cui, Zhi, "Modeling And Simulation Of Long Term Degradation And Lifetime Of Deep-submicron Mos Device And Circuit" (2005). Electronic Theses and Dissertations, 2004-2019. 300.