Vertical double-diffused metal oxide semiconductor (VDMOS) power transistor has been studied. The use of superjunction (SJ) in the drift region of VDMOS has been evaluated using three-dimensional device simulation. All relevant physical models in Sentaurus are turned on. The VDMOS device doping profile is obtained from process simulation. The superjunction VDMOS performance in off-state breakdown voltage and specific on-resistance is compared with that in conventional VDMOS structure. In addition, electrical parameters such as threshold voltage and charge balance are also examined. Increasing the superjunction doping in the drift region of VDMOS reduces the on-resistance by 26%, while maintaining the same breakdown voltage and threshold voltage compared to that of the conventional VDMOS power transistor with similar device design without using a superjunction.
If this is your thesis or dissertation, and want to learn how to access it or for more information about readership statistics, contact us at STARS@ucf.edu
Yuan, Jiann S.
Master of Science in Electrical Engineering (M.S.E.E.)
College of Engineering and Computer Science
Electrical Engineering and Computer Engineering
Length of Campus-only Access
Masters Thesis (Open Access)
Mendoza Macias, Raul, "Design and Optimization of Superjunction Vertical DMOS Power Transistors using Sentaurus Device Simulation" (2016). Electronic Theses and Dissertations. 5137.