The resistivity size effect in nanoscale metals is of both scientific and technological interest, the latter due to its importance to interconnects between transistors in integrated circuits. In this work we report the variation of resistivity associated with surface scattering of ex-situ annealed single crystal Ru thin films grown on sapphire substrates by sputter deposition. A set of samples were overcoated with dielectric and subjected to a variety of reducing and oxidizing anneals. The changes in the chemistry and structure of the dielectric interface induced by the anneals, as determined by x-ray reflectivity and x-ray photoelectron spectroscopy measurements, are related to the changes in the specularity of the surface for electron scattering in the context of the Fuchs-Sondheimer semi-classical model of the resistivity size effect.
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Doctor of Philosophy (Ph.D.)
College of Sciences
Length of Campus-only Access
Doctoral Dissertation (Open Access)
Ezzat, Sameer, "Chemistry and Structure of Ru/SiO2 and Ru/Al2O3 Interfaces" (2019). Electronic Theses and Dissertations, 2004-2019. 6388.