The Optical Transfer-Function Of Silicon Solar-Cells: Theory And Experiment
Abbreviated Journal Title
A method for determining the diffusion capacitance for silicon solar cells is presented for the case where the cells are used as low rate optical detectors in communication systems. The internal resistances and capacitances, however, limit the usable bandwidth. In solar cells, when photons are absorbed and electron-hole pairs are produced, a diffusion capacitance effect appears, which is similar to the process exhibited in diodes when a rearrangement of minority carriers takes place. The diffusion capacitance is measured as a function of background illumination using an argon laser-variable beamsplitter. The background illumination causes addition of noise, some of which is 60 Hz modulation by the background source and the decay time constant decreases as background illumination increases. The latter point was supported experimentally.
Mallette, L. A. and Phillips, R. L., "The Optical Transfer-Function Of Silicon Solar-Cells: Theory And Experiment" (1984). Faculty Bibliography 1980s. 316.