1/F Optimization For A Complementary Metal-Oxide Semiconductor Focal Plane Array Input Circuit
Abbreviated Journal Title
In electro-optical detector systems, the noise characteristics of transresistance amplifiers are sensitive to the incremental conductivity of the photovoltaic detector. In this paper we show that the 1/f noise corner frequency contributed to the noise by the amplifier is a function of the bias applied to the detector. The 1/f noise corner frequency of the diode in cooled focal plane arrays is also a function of the reverse bias, but there is an optimum reverse bias that is not 0 V. This fact becomes important when it is necessary to use complementary metal oxide semiconductor amplifiers that have lame 1/f noise corner frequencies.
Martin, R. J. and Herzog, W. R., "1/F Optimization For A Complementary Metal-Oxide Semiconductor Focal Plane Array Input Circuit" (1988). Faculty Bibliography 1980s. 664.