A Physics-Based Current-Dependent Base Resistance Model For Advanced Bipolar Transistors
Abbreviated Journal Title
IEEE Trans. Electron Devices
Engineering; Electrical & Electronic; Physics; Applied
A physics-based current-dependent base resistance model has been developed that includes physical mechanisms such as base-width modulation, base-conductivity modulation, phase pushout, and emitter current crowding. It describes the current-dependent characteristics of the base resistance for all injection levels. A two-dimensional device simulator, PISCES, is used to justify the underlying physics. The predictions of the model show good agreement with results of measurements and device simulations. The model has been implemented in SPICE.
IEEE Transactions on Electron Devices
Yuan, J. S.; Liou, J. J.; and Eisenstadt, W. R., "A Physics-Based Current-Dependent Base Resistance Model For Advanced Bipolar Transistors" (1988). Faculty Bibliography 1980s. 725.