Physics-Based Bipolar Transistor Model For Low-Temperature Circuit Simulation
Abbreviated Journal Title
J. Appl. Phys.
A comprehensive bipolar transistor model based on the Gummel-Poon model for low-temperature circuit simulation is presented. Low-temperature physical properties such as doping-dependent dielectric permittivity, temperature-dependent free-carrier mobility and intrinsic carrier density, and deionization of impurity dopants are included in the model. Consequently, the model does not require temperature-fitting parameters as does the Gummel-Poon model. Comparisons of the present model with the Gummel-Poon model, with experimental data, and with PISCES two-dimensional device simulation are included.
Journal of Applied Physics
Liou, J. J. and Yuan, J. S., "Physics-Based Bipolar Transistor Model For Low-Temperature Circuit Simulation" (1989). Faculty Bibliography 1980s. 803.