Simple Method For Extracting The Difference Between The Drain And Source Series Resistances In Mosfets
Abbreviated Journal Title
MOSFETS; SEMICONDUCTOR DEVICE CHARACTERIZATION; CHANNEL LENGTH; Engineering, Electrical & Electronic
A simple method for extracting the difference between the drain and source series resistances (R(d)-R(s)) in MOSFETs is presented. This method is applicable for n- and p-channel MOSFETs with any channel length. The results show that the magnitude of (R(d)-R(s)) increases with the drain current.
"Simple Method For Extracting The Difference Between The Drain And Source Series Resistances In Mosfets" (1994). Faculty Bibliography 1990s. 1136.