Abbreviated Journal Title
Phys. Rev. B
Highly Excited Semiconductors; Refraction; Algaas; Index; Mechanisms; Physics; Condensed Matter
The bound-electronic optical nonlinearities in highly excited semiconductors (i.e., semiconductor lasers) have been calculated using a two-parabolic-band model. The nonlinear absorption spectrum is first obtained using a dressed-state formalism taking into account the contributions from two-photon absorption, electronic Raman, and optical Stark effects. The nonlinear refractive index ( n 2 ) is then found by performing a Kramers-Kronig transformation on the nonlinear absorption spectrum. It is also shown that the quadratic Stark splitting of the bands leads to a shift in the quasi-Fermi levels, which introduces additional absorptive and refractive nonlinearities. The sign, magnitude, and the current-density dependence of the calculated n 2 agree well with some recently published experimental results for Al-Ga-As and In-Ga-As-P diode lasers.
Physical Review B
Sheik-Bahae, M. and Van Stryland, E. W., "Ultrafast Nonlinearities In Semiconductor-Laser Amplifiers" (1994). Faculty Bibliography 1990s. 1174.