Transient Analysis Of Minority-Carrier Diffusion In The Base Of P/N Junction Diodes And Bipolar-Transistors
Abbreviated Journal Title
Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.
SEMICONDUCTOR DEVICE MODELING; TRANSIENT ANALYSIS; CHARGE; Physics, Applied
The time-dependent minority carrier distribution in the base of a bipolar p/n junction subjected to a step-up or step-down (switch-on or switch-off) applied voltage has been obtained. Analytical expressions are found by solving the time-dependent minority-carrier diffusion equation with appropriate boundary conditions. A general case with arbitrary base width under both switch-on and switch-off transients is considered. In addition, the validity of the constant-voltage and constant-current approaches under different base widths and different bias conditions are also discussed. This analytical approach is also applied to obtain the turn-on current transients of a forward-active bipolar transistor. The results are compared with those simulated from the conventional Gummel-Poon model and obtained from measurement.
Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers
"Transient Analysis Of Minority-Carrier Diffusion In The Base Of P/N Junction Diodes And Bipolar-Transistors" (1995). Faculty Bibliography 1990s. 1356.